| abstract |
Provided is a plasma CVD apparatus including a reaction chamber (1) having an inlet (5) for supplying a compound having a borazine skeleton, a feeding electrode (7), arranged within the reaction chamber (1), for supporting a substrate (8) and being applied with a negative charge, and plasma generating means (12), arranged opposite to the feeding electrode (7) via the substrate (8), for generating a plasma (11) within the reaction chamber (1). Also provided are a method for forming a thin film wherein a thin film is formed by using a compound having a borazine skeleton as a raw material, and a semiconductor device that includes a thin film formed by such a method as an insulating film. The present invention enables to produce a thin film wherein low dielectric constant and high mechanical strength are stably maintained for a long time and insulating characteristics are secured. |