| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b2b31f8612f522a744762d83c23879ba |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-774
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-773
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-962 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y20-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61N1-0452
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61N1-36014
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61N1-3603
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61N1-0492
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61N1-36021
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61N1-0484 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-18 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-34 |
| filingDate |
2006-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8f862abd5c3896d210afeff4b01f78f8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_00a6034f921d5e84c48f46cb99e7ed86
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_15b252d4325155446adc392e16a5b814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4df03dfe8aa601375476019d03f3e92b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f648f94ec71b3369b51f902d46d96bc2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d9f72ed4340bd5195d0c710f68cefc3e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_944129c1ab4adedea2c477e7f8247864 |
| publicationDate |
2008-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-1992019-A1 |
| titleOfInvention |
Semiconductor light emitting diode that uses silicon nano dot and method of manufacturing the same |
| abstract |
Provided is a semiconductor light emitting diode that uses a silicon nano dot and a method of manufacturing the same. The semiconductor light emitting diode includes a light emitting layer that emits light; a hole injection layer formed on the light emitting layer; an electron injection layer formed on the light emitting layer to face the hole injection layer; a metal layer that comprises a metal nano dot and is formed on the electron injection layer; and a transparent conductive electrode formed on the metal layer. Amorphous silicon nitride that includes the silicon nano dot is used as the light emitting layer. |
| priorityDate |
2006-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |