| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_32dbc72e57b6837a16ace76ba3edc1a3 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12044 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2855
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76846
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76864
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-5806
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-3414 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C22C9-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C22C9-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C22C9-05
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C22C9-04 |
| filingDate |
2007-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b6628f4208f0b019d2d042368fdc38f0 |
| publicationDate |
2008-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-1990432-A1 |
| titleOfInvention |
Semiconductor device, its manufacturing method, and sputtering target material for use in the method |
| abstract |
A semiconductor device enables a barrier layer to fully acquire a barriering property against the diffusion of Cu from a wiring main body and the diffusion of Si from an insulating film, enhances the adhesiveness of the barrier layer and the insulating film and excels in reliability of operation over a long period of time. In this invention, a semiconductor device 1 provided on an insulating film 3 with a wiring includes the insulating film 3 containing silicon (Si), a wiring main body 8 formed of copper (Cu) in a groove-like opening 4 disposed in the insulating film 3, and a barrier layer 7 formed between the wiring main body 8 and the insulating film 3 and made of an oxide containing Cu and Si and Mn in such a manner that the atomic concentration of Cu decreases monotonously from the wiring main body 8 side toward the insulating film 3 side, the atomic concentration of Si decreases monotonously from the insulating film 3 side toward the wiring main body 8 side, and the atomic concentration of Mn is maximized in the region in which the atomic concentration of Cu and the atomic concentration of Si are approximately equal. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9252226-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/FR-3096830-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2014787-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9837446-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2014787-A4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11610813-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9589998-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9564356-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11152259-B2 |
| priorityDate |
2006-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |