| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b7317808024e524eea40a6c5a5ad6a22 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14658
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1464
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14683
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-107 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-107 |
| filingDate |
2007-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_929e84cd67edf29dd628cdc8d5db3ae6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_34d892277a42126ce330bc4d0b9b4751
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_54b5154d2f917062baa019c8a2c1a05f |
| publicationDate |
2008-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-1982356-A2 |
| titleOfInvention |
Geiger mode avalanche photodiode |
| abstract |
An avalanche mode photodiode array (102) is fabricated using a silicon on insulator wafer and substrate transfer process. The array includes a plurality of photodiodes (100). The photodiodes (100) include an electrically insulative layer (206), a depletion region (204), and first (208) and second (210) doped regions. An interconnection layer (212) includes electrodes (214, 216) which provides electrical connections to the photodiodes. The photodiode array (102) is carried by a handle wafer (217). |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11664470-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11611002-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11424377-B2 |
| priorityDate |
2006-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |