Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31612 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3121 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-84 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0234 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-786 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
filingDate |
2008-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b4141ce7a21c556aa78447250d5bf672 |
publicationDate |
2008-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
EP-1978554-A2 |
titleOfInvention |
Method for manufacturing semiconductor substrate comprising implantation and separation steps |
abstract |
A method for manufacturing a semiconductor substrate is provided, which comprises a step of irradiating a single crystal semiconductor substrate with ions to form an embrittlement layer in the single crystal semiconductor substrate, a step of forming a silicon oxide film over the single crystal semiconductor substrate, a step of bonding the single crystal semiconductor substrate and a substrate having an insulating surface with the silicon oxide film interposed therebetween, a step of performing a thermal treatment, and a step of separating the single crystal semiconductor substrate with a single crystal semiconductor layer left over the substrate having the insulating surface. |
priorityDate |
2007-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |