http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1955362-A2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_916075766043ce900399a4c2eee9f054 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05G2-003 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05G2-00 |
| filingDate | 2006-10-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7ca2b79b13050c86656b3a6fdc2e59db http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f0ccc14502ad2acf13a31d3b8c2677e5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cb890ace32bbc056d97a2dea5c55087f |
| publicationDate | 2008-08-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-1955362-A2 |
| titleOfInvention | Plasma-based euv light source |
| abstract | Various mechanisms are provided relating to plasma-based light source that may be used for lithography as well as other applications. For example, a device is disclosed for producing extreme ultraviolet (EUV) light based on a sheared plasma flow. The device can produce a plasma pinch that can last several orders of magnitude longer than what is typically sustained in a Z-pinch, thus enabling the device to provide more power output than what has been hitherto predicted in theory or attained in practice. Such power output may be used in a lithography system for manufacturing integrated circuits, enabling the use of EUV wavelengths on the order of about 13.5 nm. Lastly, the process of manufacturing such a plasma pinch is discussed, where the process includes providing a sheared flow of plasma in order to stabilize it for long periods of time. |
| priorityDate | 2005-10-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.