http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1928021-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cef1f43aa7ea51e6a592082d9f2a3103 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823835 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823842 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 |
| filingDate | 2007-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c6527cd92bf662b4d04616689b44bd8a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21842dd67e5dfa4d9882afaf0925c50d |
| publicationDate | 2008-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-1928021-A1 |
| titleOfInvention | Method of manufacturing a semiconductor device with dual fully silicided gate |
| abstract | Manufacturing a dual work function semiconductor device involves providing a first metal layer (108) over a first electrode (102a) in a first region (101a), and at least a first work function tuning element. Also provided is a second metal layer (109) of a second metal in a second region (101b) at least over a second electrode (102b). A first silicidation of the first electrode (102a) and a second silicidation of the second electrode (102b) are performed simultaneously. |
| priorityDate | 2006-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.