| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1af8df51ce24ca931ae718fb747f6aa0 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-26 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate |
2006-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_908d4a01e70cd216cf495e700cb9784c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ed54a128a512959c3facea9d081265a6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7a306405a8a42bad8c0976e6b7167ce1 |
| publicationDate |
2008-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-1925034-A1 |
| titleOfInvention |
Field-effect transistor having a channel comprising an oxide semiconductor material including indium and zinc |
| abstract |
Disclosed herein is a field-effect transistor comprising a channel comprised of an oxide semiconductor material including In and Zn. The atomic compositional ratio expressed by In/(In + Zn) is not less than 35 atomic% and not more than 55 atomic%. Ga is not included in the oxide semiconductor material or the atomic compositional ratio expressed by Ga/(In + Zn + Ga) is set to be 30 atomic% or lower when Ga is included therein. The transistor has improved S-value and field-effect mobility. |
| priorityDate |
2005-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |