http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1900045-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fb11c8dcf8ef9b6c8b9b8a3f73668310 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76886 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76849 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-40 |
| filingDate | 2006-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b9687a681091de007d13110c7def0369 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_20fe53555767b60b24005aae2184e8f2 |
| publicationDate | 2008-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-1900045-A1 |
| titleOfInvention | Preamorphization to minimize void information |
| abstract | Methods are described for eliminating void formation during the fabrication of and/or operation of memory cells/devices. The methods to eliminate voids may include formation of an opening on a semiconductor structure, formation of a diffusion barrier layer, deposition of a metal into the opening, preamorphization of the metal using preamorphization implants, and formation of a conductivity facilitating layer. The methods to eliminate voids may alternatively include formation of an opening on a semiconductor structure, formation of a diffusion barrier layer, deposition of a metal into the opening, preamorphization of the metal using a contact with a plasma, and formation of a conductivity facilitating layer. |
| priorityDate | 2005-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 67.