http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1899976-A2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c2f092a035fb1a8cc488abbd044a0e65 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11B20-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11B9-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11B9-149 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11B9-065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11B9-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01F1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11B7-00 |
| filingDate | 2006-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_554c2ad8a80d8a6b5eb53d4881f3db6d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_73e02774a0cdd5d074a846a93a7e0398 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_99a2ee33689d51e43cca998801f229f3 |
| publicationDate | 2008-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-1899976-A2 |
| titleOfInvention | Media for writing highly resolved domains |
| abstract | Systems in accordance with the present invention can include a tip contactable with a media, the media including a phase change material in an embodiment (or polarity-dependent memory material or other memory material in other embodiments) disposed between a substrate and an overcoat. The overcoat is a co-deposited film having a conductive portion and a substantially non-conductive portion, the co-deposited film conducting current more efficiently through the overcoat than across the overcoat. The overcoat substantially directs the current so that a portion of the phase change material directly beneath the tip is heated to a sufficient temperature such that the structure of the material become disordered. The current is then removed from the phase change material, which is quickly cooled to form an domain having a resistivity larger than the crystalline bulk structure. |
| priorityDate | 2005-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 76.