| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c3a2f00e72ba6e4c09b6da573427fbed |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B99-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0011 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C13-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-02 |
| filingDate |
2006-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2009-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8c0f127bf6e9b5c2a92431284a9d314b |
| publicationDate |
2009-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-1889308-B1 |
| titleOfInvention |
Memory device with switching glass layer |
| abstract |
A memory device (100) , such as a PCRAM, including a chalcogenide glass backbone material with germanium telluride glass (18) in contact with a metal-chalcogenide (20) such as tin selenide and methods of forming such a memory deviceare disclosed. |
| priorityDate |
2005-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |