| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b051f9f7933c758e66f6ceda5c9fb2cc |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K77-10 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78603
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1292
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1248
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-472
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02362
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3122
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-77 |
| filingDate |
2007-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f29d1f63984c395db3a6de6a127b34a3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f37431728c3c8b0e4410ef9cf0011018
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_119816eb7a02d548f9bd2361476f8f01
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f73bae8d51cff769ad23a2ffee036378 |
| publicationDate |
2008-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-1879234-A2 |
| titleOfInvention |
Low temperature sol-gel silicates as dielectrics or planarization layers for thin film transistors |
| abstract |
Traditionally, sol-gel silicates have been reported as being high temperature processable at 400C to give reasonably dense films that showed good leakage current densities (<5 x 10 -8 A/cm 2 ). Recently we have discovered that we are able to prepare films from particular combinations of sol-gel silicate precursors that cure at 135°C to 250°C and give good leakage current density values (9 x 10 -9 A/cm 2 to 1 x 10 -10 A/cm 2 ) as well, despite the decrease in processing temperatures. These are some of the first examples of silicates being cured at lower temperatures where the leakage current density is sufficient low to be used as low temperature processed or solution processable or printable gate dielectrics for flexible or lightweight thin film transistors. These formulations may also be used in the planarization of stainless steel foils for thin film transistors and other electronic devices. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2865703-A4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9269874-B2 |
| priorityDate |
2006-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |