| abstract |
The present invention provides novel compounds of the formula Gei-x-ySixSny, wherein 0.01< y < 0.11, and 0.26 < x < 0.35., and semiconductor structures comprising such compounds. The present invention also provides novel semiconductor structures comprising silicon substrates, an SiGe buffer layer, and a Group III-V or II- VI active layer. The present invention also provides novel semiconductor structures comprising silicon substrates, an SiGe buffer layer, an SiGeSn template layer, and an SiGe, Ge, Group III-V, or Group II- VI active layer. |