| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73ebc284a55d5daf0e209d6186c9e65c |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-464
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-486
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-549
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-82
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-1135
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-113
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-151
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-215
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-471
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-466 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-1135
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-113
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-486
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K30-81
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K30-65
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-471
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-215
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-151 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-44 |
| filingDate |
2007-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_455e1424499a4ab7b56ab2347c1b8815 |
| publicationDate |
2007-11-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-1852923-A2 |
| titleOfInvention |
Photosensing transistors |
| abstract |
A thin film transistor (TFT) photosensitive to illumination with light, which may enhance the transistor's characteristics and the controlling parameters of the transistor state. The transistor comprises an insulating substrate (1); a source electrode (2); a drain electrode; a semiconductor layer (4) of a first semiconductor material, which forms a channel of the transistor; a gate electrode (6); and an insulating layer (5) between the gate electrode and the semiconductor layer. A second semiconductor material (3) is disposed between and in electrical connection with the semiconductor layer and at least one of the source electrode and the drain electrode. The second semiconductor material is photoconductive. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I421946-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9748401-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2008122586-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8642379-B2 |
| priorityDate |
2006-05-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |