| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b051f9f7933c758e66f6ceda5c9fb2cc |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-31663 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1208
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31695
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02351
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-127
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-145
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01B3-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-143 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C18-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C18-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B05D3-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B3-46 |
| filingDate |
2004-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6f6d158fade619576976b30c983a5fc2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c6c4f021ad89fcf7562db14e3bd26e19
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8f0162d3514279f80fb8def9dfe81d6b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ed460044ad31c10b6c59c410f39c1d2b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f73bae8d51cff769ad23a2ffee036378
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cf382e9170b4d0e9ccad68a4ef1f8887 |
| publicationDate |
2007-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-1837086-A3 |
| titleOfInvention |
Low dielectric materials and methods for making same |
| abstract |
Low dielectric materials and films comprising same have been identified for improved performance when in integrated circuits as well as a method and a mixture for making same. In one embodiment of the invention, there is provided a mixture for forming a porous, low-k dielectric material comprising: at least one silica source having an at least one silicon atom and an organic group comprising carbon and hydrogen atoms attached thereto wherein at least one hydrogen atom within the organic group is removable upon exposure to an ionizing radiation source; and at least one porogen wherein the ratio of the weight of at least one porogen to the weight of the at least one porogen and SiO 2 provided by the at least one silica source is 0.4 or greater. The mechanical and other properties of the porous, silica-based material are improved via exposure to the ionizing radiation source. |
| priorityDate |
2003-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |