| abstract |
A method is disclosed to make pure-silica-zeolite films more implementable as low-k material in semiconductor processing. n Specifically, the pure-silica-zeolite films obtained are more hydrophobic, homogeneous and with no cracks. n The method is a UV cure, preferably said UV cure is performed at temperatures at higher than the deposition temperature. The UV-assisted cure removes the organic template promoting organic functionalization and silanol condensation making pure-silica-zeolite films hydrophobic. n Moreover, the zeolite material will also be mechanical stronger. |