| abstract |
Object: The present invention provides a method for forming a copper-containing film having a low resistance at a low temperature, according to the CVD technique. Means for the Solution: A copper-containing film is formed on a barrier layer formed from an organometallic raw material gas and a reducing gas, according to the CVD technique, using a copper complex represented by the following general formula (I) (X, Y and Z are the same as those specified below) which possesses, as a ligand, a β-diketonate group represented by the following general formula (I)' (Z represents an H atom or an alkyl group having 1 to 4 carbon atoms; X represents a group denoted by the following general formula (I-I) (R a represents a linear or branched alkylene group having 1 to 5 carbon atoms, and R b , R c and R d each independently represent a linear or branched alkyl group having 1 to 5 carbon atoms), Y represents a group denoted by the following general formula (I-I) (Ra, R b , R c and R d are the same as those defined above)): |