Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8e0bf0928b608797b70bbc2b91c7e52e |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-543 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0296 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0321 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-032 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02568 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02573 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-068 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1828 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02963 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02562 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0296 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-032 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-48 |
filingDate |
2005-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2012-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_41516bf71cc65e8be0a151ed1405588a |
publicationDate |
2012-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
EP-1807872-B1 |
titleOfInvention |
Photovoltaic cell comprising a photovoltaic active semiconductor material |
abstract |
The invention relates to a photovoltaic cell comprising a photovoltaic active semiconductor material. Said photovoltaic cell is characterized in that the photovoltaic active semiconductor material is a p-doped or n-doped semiconductor material having a binary compound of formula (I) or having a tertiary compound of formula (II): ZnTe (I), Zn1-xMnxTe (II), wherein x = a number from 0.01 to 0.99. A defined portion of tellurium ions in said photovoltaic active semiconductor material is substituted by halogen ions and nitrogen ions and the halogen ions are selected from the group including fluoride, chloride and bromide or a mixture thereof. |
priorityDate |
2004-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |