http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1800345-A4

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filingDate 2005-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6164f5de4c4a6470cc817c1379647671
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publicationDate 2008-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-1800345-A4
titleOfInvention PROCESS FOR PREPARING DEFECT-FREE SUBSTRATE FROM SIGE-ON ISOLATOR (SGOI) WITH HIGH GE-CONTENT (25%) USING WAFER BONDING TECHNIQUES
abstract A method for achieving a substantially defect free SGOI substrate which includes a SiGe layer that has a high Ge content of greater than about 25% atomic using a low temperature wafer bonding technique is described. The wafer bonding process described in the present application includes an initial prebonding annealing step that is capable of forming a bonding interface comprising elements of Si, Ge and O, i.e., interfacial SiGeO layer, between a SiGe layer and a low temperature oxide layer. The present invention also provides the SGOI substrate and structure that contains the same
priorityDate 2004-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 26.