http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1788440-A2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2041 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-168 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-38 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11 |
| filingDate | 2006-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4cdd139ea6e212b050c54fc6f2246ed9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3c227385de57a4cdfddedb2fc25019f1 |
| publicationDate | 2007-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-1788440-A2 |
| titleOfInvention | Barrier film material and pattern formation method using the same |
| abstract | In a pattern formation method, a barrier film including a polymer and a cross-linking agent for thermally causing a cross-linking reaction of the polymer is formed on a resist film formed on a substrate. Subsequently, the barrier film is annealed for cross-linking the polymer, and pattern exposure is performed by selectively irradiating the resist film with exposing light through the barrier film with a liquid provided on the barrier film. Then, after removing the barrier film, the resist film is developed after the pattern exposure. Thus, a resist pattern made of the resist film is formed. |
| priorityDate | 2005-11-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 64.