http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1771592-A1

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filingDate 2005-05-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_12ce42e50cc1e05acabb1267f47714c4
publicationDate 2007-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-1771592-A1
titleOfInvention Method and apparatus of plasma processing.
abstract A deposition system (100) and method of operating thereof is described for depositing a conformal metal or other similarly responsive coating material film in a high aspect ratio feature using a high density plasma is described. The deposition system includes a plasma source (120), and a distributed metal source (130) for forming plasma and introducing metal vapor to the deposition system (100), respectively. The deposition system is configured to form a plasma having a plasma density and generate metal vapor having a metal density, wherein the ratio of the metal density to the plasma density proximate the substrate is less than or equal to unity. This ratio should exist at least within a distance from the surface of the substrate (114) that is about twenty percent of the diameter of the substrate. A ratio that is uniform within plus or minus twenty-five percent substantially across the surface of said substrate is desirable. The ratio is particularly effective for plasma density exceeding 1012 cm-3, and for depositing film on substrates having nanoscale features with maximum film thickness less than half of the feature width, for example, at ten percent of the feature width.
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/RU-2550230-C2
priorityDate 2004-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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