http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1758158-A2
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d79a3714d75520adeea100b7ed428a77 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-00 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 |
filingDate | 2006-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f26375565a3d4479b402c2a9bef358ab http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e8b417cfcb97910e038e1b54ee9e4d69 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4788631a0c9c34464bb3bef99fa536b5 |
publicationDate | 2007-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | EP-1758158-A2 |
titleOfInvention | Silicon wafer surface defect evaluation method |
abstract | There is provided a silicon wafer surface defect evaluation method capable of readily detecting a region where small crystal defects exist. n A silicon wafer surface defect evaluation method according to the present invention is characterized by comprising: a rapid heat treatment step of applying a heat treatment to a silicon wafer cut out from a silicon single-crystal ingot in an atmosphere which can nitride silicon at a temperature elevating speed of 10 to 150°C/second from a room temperature to temperatures between not lower than 1170°C and less than a silicon melting point, holding the silicon wafer at the processing temperature for 1 to 120 seconds and then cooling the silicon wafer to the room temperature at a temperature lowering speed of 10 to 100°C/second; and a step of using a surface photo voltage method to calculate a minority carrier diffusion length on the wafer surface, thereby detecting a region on the wafer surface in which small COP's which cannot be detected at least by a particle counter exist. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-101459095-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/FR-2941326-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2209137-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8003550-B2 |
priorityDate | 2005-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.