| abstract |
Compounds of the general formula (I) and their use for the chemical vapor deposition process are described: in which M is Nb or Ta, R 4 is halogen from the group Cl, Br, I, or NH-R 5 with R 5 = optionally substituted C 1 - to C 8 -alkyl-, C 5 - to C 10 -cycloalkyl- or C 6 - to C 10 - Aryl radical, or OR 6 with R 6 = optionally substituted C 1 - to C 11 alkyl, C 5 - to C 10 cycloalkyl, C 6 - to C 10 aryl radical, or -SiR 3 , or BH 4 , or an optionally substituted allyl radical, or an indenyl radical, or an optionally substituted benzyl radical, or an optionally substituted cyclopentadienyl radical, or -NR-NR'R "(hydrazido (-1), where R , R 'and R "have the abovementioned meaning of R, or CH 2 SiMe 3 , pseudohalide (eg -N 3 ), or silylamide -N (SiMe 3 ) 2 . |