| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-3011
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-1903
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2223-6622
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2223-6627 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01P11-003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5222
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7682
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76838
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-02 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-4763
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01P11-00 |
| filingDate |
2005-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d90caf253bc7bbe51afc915197c0171d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_925cbd4cfc56e6244ac7f3c2bb9707d8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ee9471aac0b8ee681c6dafa57bc68c29
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d3899e6d6b4abb78617096cddbd4f502
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a991fbcb94ff236a45999146d5972bc1 |
| publicationDate |
2007-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-1756862-A1 |
| titleOfInvention |
Method for forming suspended transmission line structures in back end of line processing |
| abstract |
A method for forming a transmission line structure (300) for a semiconductor device includes forming an interlevel dielectric layer over a first metallization level, removing a portion of the interlevel dielectric layer and forming a sacrificial material within one or more voids (308) created by the removal of the portion of the interlevel dielectric layer. A signal transmission line (302) is formed in a second metallization level formed over the interlevel dielectric layer, the signal transmission line (302) being disposed over the sacrificial material. A portion of dielectric material included within the second metallization level is removed so as to expose the sacrificial material, wherein a portion of the sacrificial material is exposed through a plurality of access holes (310) formed through the signal transmission line (302). The sacrificial material is removed so as to create an air gap beneath the signal transmission line (302). |
| priorityDate |
2004-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |