| abstract |
The invention relates to a composition in the form of a dispersion or a slurry for chemo-mechanical polishing (CMP) in the production of electronic or micro-electronic components, in particular, semiconductor elements and/or a mechanical component, in particular, a micro-electronic mechanical component or semiconductor element (MEMS), whereby a material is provided with a high ablation rate with a gentle polishing action. The above is achieved, whereby the composition contains titanium oxide particles with approximate formula Ti02 * xH2O * yH2SO4, where the H2O content of the titanium oxide hydrate particles is 4 - 25 wt. %, preferably 2 - 10 wt. %, and the H2S04 content is 0 - 15 wt. %, preferably 0.1 10 wt. %. |