| abstract |
The invention provides a CSP type semiconductor device with high reliability. n The semiconductor device includes a pad electrode (4) formed on a semiconductor substrate (1) with insulation films (2, 3) interposed therebetween, a plating layer (7) formed on the pad electrode (4), a conductive terminal (9) formed on the plating layer and electrically connected with the pad electrode (4), and a first passivation film (5) covering the insulation films (2, 3) and a side end portion of the pad electrode (4), in which an exposed portion of the pad electrode (4) that causes corrosion is covered by forming a second passivation film (10) so as to cover the first passivation film (5), the plating layer (7), and a portion of a sidewall of the conductive terminal (9). |