| abstract |
A method of manufacturing a semiconductor device having a through electrode, includes forming through holes (36) in a substrate (31), forming a first metal layer (39) on one surface side of the substrate and pasting a protection film (40) on the first metal layer (39), forming through electrodes by filling the through holes with a second metal by means of an electroplating of the second metal (42) applied from another surface of the substrate while using the first metal layer as a power feeding layer, removing the protection film (40), and removing the first metal layer (39) located in areas other than peripheral portions of the through electrodes. |