| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7af673589ca45d2fd8b9ea902cdbd1dc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d79a3714d75520adeea100b7ed428a77 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0634
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02063
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0237
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0245 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate |
2005-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8aae3f71c060af7de43ea87eb0bc8a6a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2a705174f71a804e13b4138c6cbddcaf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_456c065c8172110f4ee7362b2ae93c0a |
| publicationDate |
2006-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-1734565-A1 |
| titleOfInvention |
Method for manufacturing semiconductor wafer and semiconductor wafer manufactured by such method |
| abstract |
A resistivity of an epitaxial layer in a trench is changed in a stepwise manner by reducing a quantity of an impurity diffused into the epitaxial layer in the trench from a semiconductor wafer in a stepwise manner, thereby suppressing an influence of auto-doping from the semiconductor wafer. n An epitaxial layer 17 is grown in a trench 16 of a semiconductor wafer 10 having a trench structure by gradually reducing a temperature in a temperature in the range of 400 to 1150°C by a vapor growth method while supplying a silane gas as a raw material gas, thereby filling the epitaxial layer 17 in the trench 16. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7635622-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2702611-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2702611-A4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9431481-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7858475-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2413348-A4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2413348-A1 |
| priorityDate |
2004-04-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |