| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cef1f43aa7ea51e6a592082d9f2a3103
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0e433c1625fc509a087c912b440da84b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36c0172f6059c0b200188dba42db7fa6 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4975
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26506
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28052
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28097 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 |
| filingDate |
2006-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_55b0ceec5d3a146d8f0220e0db0b2f79
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5d0ea6de15ea651736ff9e4b21fb6f97
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fe5daa6e4aaf36714228b913e14d179b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c673e554b4133609e00abc1a03c16de2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_67bbc896f7d3c962fee1dfecd2e5438f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_66a40ff4a2a69530800c8475afb0d57d |
| publicationDate |
2006-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-1722404-A2 |
| titleOfInvention |
Low work function metal alloy |
| abstract |
The present invention discloses low work function metals for use as gate electrode in nMOS devices. n An alloy of lanthanide(s), metal and semiconductor is provided. In particular an alloy of Nickel-Ytterbium (NiYb) is used to fully silicide (FUSI) a silicon gate. The resulting Nickel-Ytterbium-Silicon gate electrode has a work function of about 4.22eV. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1916706-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7759748-B2 |
| priorityDate |
2005-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |