| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_384ff8366ef712ffb0a899be278205c1 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-4143 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-414 |
| filingDate |
2006-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_933920a1f33db869781a1add62277a74
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2f91509c35271261901a2cbb78fcf3e9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5b1d0a746f1ee7604a5adbe15e4b4890
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b6aa6bc34ec83e3b2f5103df0f1d12e7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_90aad66a19951e2be6a606c3683c6b8a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c32bc917ab6cfa9b92369d7288d95b8a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a7d6f1aa90650d7f5dda1e8e84245c9a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_43e73f97e00ab600a6accd134fe6ac28 |
| publicationDate |
2006-10-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-1707951-A1 |
| titleOfInvention |
Gas-sensitive field effect transistor for detecting hydrogen sulphide |
| abstract |
Gas-sensitive field-effect transistor for detecting H 2 S with a raised gate electrode (9) and an air gap (4) between gate electrode (9) and transistor insulation (7) with a gas-sensitive layer (1) on the gate electrode, whose potential change with the target gas present due to work function changes are readable by the transistor at the sensitive layer, wherein the gas-sensitive layer consists of either SnO 2 or silver, silver-containing material or silver oxide-containing material or a mixture thereof. |
| priorityDate |
2005-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |