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publicationDate 2006-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-1677361-A2
titleOfInvention Semiconductor device and method for manufacture thereof
abstract A zirconium silicate layer 103 is formed on a silicon substrate 100, a zirconium oxide layer 102 is also formed on the zirconium silicate layer 103, and the zirconium oxide layer 102 is then removed, thereby forming a gate insulating film 104 made of the zirconium silicate layer 103.
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