| abstract |
An SiC refractory containing silicon nitride bonded thereto which comprises SiC as a main component and Si3N4 and/or Si2N2O as sub components, and has a flexural strength of 150 to 300 MPa and a bulk density of 2.6 to 2.9; and a method for producing the above SiC refractory which comprises a step of admixing 30 to 70 mass % of a SiC powder having a size of 30 to 300 μm as an aggregate, 10 to 50 mass % of a SiC powder having a size of 0.05 to 30 μm, 10 to 30 mass % of a Si powder having a size of 0.05 to 30 μm, and 0.1 to 3 mass % in terms of an oxide of at least one selected from among Al, Ca, Fe, Ti, Zr and Mg. The SiC refractory containing silicon nitride bonded thereto has the good resistance to heat, thermal shock and oxidation and also has high strength and is excellent in the resistance to creep and in thermal conductivity. |