Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cf8d77ac0eff1767b22d2fb9445b64d |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D17-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D7-123 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D17-001 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2885 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D5-026 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D5-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67028 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67034 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67017 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67051 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D5-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-288 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D7-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D5-22 |
filingDate |
2004-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8eef00609adb34a0ff8483ee5ea64e0d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_18934a56c8e7f55be726c83fb73a8a13 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5ff05507bd6053854bfe5d91e094952d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_25635a634212abe98b0f7f2c7038b2fb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6c6a51120e3612657066d24687b6c433 |
publicationDate |
2006-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
EP-1639156-A1 |
titleOfInvention |
Apparatus and method for depositing and planarizing thin films of semiconductor wafers |
abstract |
An electroplating apparatus for depositing a metallic layer on a surface of a wafer is provided. In one example, a proximity head capable of being electrically charged as an anode is placed in close proximity to the surface of the wafer. A plating fluid is provided between the wafer and the proximity head to create localized metallic plating. |
priorityDate |
2003-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |