Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6fc8bbba7dbfdc1fe42f350fc84e17a3 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-426 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02071 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-42 |
filingDate |
2005-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_74677921f71800e517f46d99396b5e3a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cb602d40aeb8aa2b0c6826b50fec4821 |
publicationDate |
2006-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
EP-1635224-A2 |
titleOfInvention |
Composition for removing a photoresist residue and polymer residue, and residue removal process using the same |
abstract |
A composition for removing a photoresist residue and polymer residue to remove a photoresist residue and an ashing residue remaining after dry etching and after ashing of a semiconductor substrate having metal wiring formed from aluminum or an aluminum alloy is provided, the composition containing at least one type of fluorine compound (excluding hydrofluoric acid), at least one type of sulfonic acid, and water. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-101130877-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2249206-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-101130876-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2219882-A4 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11365379-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2219882-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8828918-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019145312-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2249206-A4 |
priorityDate |
2004-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |