| abstract |
In a multilayer ceramic capacitor of the present invention, a first rare earth element (R1) and a second rare earth element (R2) respectively diffuse in each of crystal grains forming dielectric layers and, assuming that, in the crystal grains each having an average grain diameter D, a ratio of a depth d1 of a diffusion layer of the first rare earth element (R1) from the surface of the crystal grain relative to the diameter D of the crystal grain is given as X1(%) and a ratio of a depth d2 of a diffusion layer of the second rare earth element (R2) from the surface of the crystal grain relative to the diameter D of the crystal grain is given as X2(%), the depth d2 of the diffusion layer of the second rare earth element (R2) reaches deeper than the depth d1 of the diffusion layer of the first rare earth element (R1) and a relationship of X1 = 10 to 35% and X2>X1 (synonymous with d2>d1) is established. Therefore, the multilayer ceramic capacitor is excellent in reliability wherein the capacitance-temperature characteristic, i.e. a time-dependent change in capacitance, satisfies the EIA standard X8R characteristic (ΔC/C = ±15% at -55 to +150°C) and the resistance change ratio in an acceleration test is small (average life is long). |