http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1612570-A2

Outgoing Links

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_af2a54ef138604c5b43bc962f5efd4bf
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-129
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-12
filingDate 2005-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3cc6359401cec9f19065ba5b1696cf55
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_65a5b7fcf3360a6611913b56f73eab34
publicationDate 2006-01-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-1612570-A2
titleOfInvention Apparatus and method for detecting breakdown of a dielectric layer of a semiconductor wafer
abstract To detect soft breakdown of a dielectric layer of a semiconductor wafer, a DC current is caused to flow between a top surface of the dielectric layer and the semiconducting material of the semiconductor wafer. The DC current is either a constant value DC current, or a DC current that swept and/or stepped from a first value toward a second value in a manner whereupon the electric field and, hence, a DC voltage induced across the dielectric layer increases as the DC current approaches the second value. The response of the semiconductor wafer to the flow of DC current is measured for the presence of an AC voltage component superimposed on the DC voltage. The value of the DC voltage induced across the dielectric layer where the AC voltage component is detected is designated as the soft breakdown voltage of the dielectric layer.
priorityDate 2004-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419556032

Total number of triples: 16.