| abstract |
A method and apparatus for depositing a low dielectricnconstant film by reaction of an organosilicon compound andnan oxidizing gas at a constant RF power level from about 10Wnto about 200W or a pulsed RF power level from about 20W tonabout 500W. Dissociation of the oxidizing gas can benincreased prior to mixing with the organosilicon compound,npreferably within a separate microwave chamber, to assist inncontrolling the carbon content of the deposited film. Thenoxidized organosilane or organosiloxane film has goodnbarrier properties for use as a liner or cap layer adjacentnother dielectric layers. The oxidized organosilane ornorganosiloxane film may also be used as an etch stop and annintermetal dielectric layer for fabricating dual damascenenstructures. The oxidized organosilane or organosiloxanenfilms also provide excellent adhesion between differentndielectric layers. A preferred oxidized organosilane filmnis produced by reaction of methylsilane, CH 3 SIH 3 ,ndimethylsilane, (CH 3 ) 2 SiH 2 , or 1,1,3,3-tetramethyldisiloxane,n(CH 3 ) 2 -SiH-O-SiH-(CH 3 ) 2 , and nitrous oxide, N 2 O,nat a constant RF power level from about 10W to about 150W,nor a pulsed RF power level from about 20W to about 250Wnduring 10 % to 30% of the duty cycle. |