| abstract |
The present invention relates to a depositionnmethod in which an insulating film that coats wiringsnmainly made of copper film and has low dielectricnconstant. Its constitution in the deposition method,nwhere deposition gas is transformed into plasma andnreaction is caused to form the insulating film havingnlow dielectric constant, is that the deposition gas hasna first silicon containing compound having cyclicnsiloxane bond and at least one of methyl group andnmethoxy group, and a second silicon containing organicncompound having straight-chain siloxane bond and atnleast one of methyl group and methoxy group, as primarynconstituent gas. |