http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1566836-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_89afae566b725ae78e20cf972d9bcdc7 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76808 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2003-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_039fd760cb1890840490f4d195bfae4c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6515258e38c6ea297c23c837e2d47e40 |
| publicationDate | 2005-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-1566836-A1 |
| titleOfInvention | Semiconductor multilayer interconnection forming method |
| abstract | In a method for forming a wiring using a dual damascene process innwhich a multilayer wiring structure is formed by embedding a first etchingnspace formed in an interlayer insulating layer and a second etching spacenwhich communicates thereto with a conductor material, a number of steps maynbe reduced and flexibility in the step management is enhanced withoutndeteriorating a low dielectric material layer which constitutes the interlayerninsulating layer. Therefor, a filler material whose major ingredient is anspin-on-glass material capable of being easily removed by a stripping solutionnwhich gives no damage to the interlayer insulating layer is used as a materialnfilled in the first etching space in order to protect a lower wiring layer fromnexposure light to form a photoresist pattern for forming the second etchingnspace. Furthermore, no light absorbing material for absorbing the exposurenlight is added to this filler material. Instead, a reflection preventing filmncapable of being processed by dry etching or a reflection preventing film whichnis soluble in a developer is formed on a filler material layer. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7704670-B2 |
| priorityDate | 2002-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 508.