http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1561123-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9e125a98c6d1a397358bd0d4731b0261 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2603 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 |
| filingDate | 2003-10-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ce277cddef32abb96240330fc989e0fd http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f5e22c1afda92759dbf39fd44380751 |
| publicationDate | 2005-08-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-1561123-A1 |
| titleOfInvention | Semiconductor monitoring instrument |
| abstract | An instrument for measuring dynamic I-V conduction characteristics of a semiconductor device-under-test is provided with a means to apply an adjustable bias at both the input and the output of a device-under-test having the form of fast, superimposed generally rectangular bipolar pulses, optionally provided with a means to measure do I-V conduction characteristics of a semiconductor device-under-test by applying a do signal at both the input and the output of the device-under-test, and provided with a means to measure the current response thereto at both input and output. A method of measure dynamic I-V conduction characteristics of a semiconductor device-under-test is also described. |
| priorityDate | 2002-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419557764 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID31170 |
Total number of triples: 14.