| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d31e0e2d55b144c4c476542e22d211a9 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30625 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B08B3-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02052
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B08B7-0092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02074
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02065 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B08B3-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B08B3-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B1-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B08B7-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B08B7-00 |
| filingDate |
2003-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ce4c8a9e8b5dd9ea5045f2b88701aa43
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4e3f813b38a48bd0cb8f2e31e34f3c62 |
| publicationDate |
2005-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-1554081-A1 |
| titleOfInvention |
Post-cmp cleaning of semiconductor wafer surfaces using a combination of aqueous and cryogenic cleaning techniques |
| abstract |
The present invention provides for a new and improved method of aqueous and cryogenic enhanced (ACE) cleaning for semiconductor surfaces as well as the surfaces of metals, dielectric films particularly hydrophobic low k dielectric films, and CMP etch stop films to remove post-CMP contaminants. It is particularly useful for removing contaminants which are 0.3 µm in size or smaller. The ACE cleaning process is applied to a surface which has undergone chemical-mechanical polishing (CMP). It includes the steps of cleaning the surface with an aqueous-based cleaning process, at least partially drying the surface, and, shortly thereafter, cleaning the surface with a C02 cryogenic cleaning process. This process removes such contaminants from surfaces which are hydrophobic and hence difficult to clean with aqueous-based cleaning techniques alone. |
| priorityDate |
2002-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |