http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1553667-A2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73ebc284a55d5daf0e209d6186c9e65c |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18313 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S2301-176 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-548 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0264 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18377 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-1838 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0282 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-183 |
| filingDate | 2005-01-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_702126cff7f23241e3001e0629ca9576 |
| publicationDate | 2005-07-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-1553667-A2 |
| titleOfInvention | Optical element, and its manufacturing method |
| abstract | The invention relates to providing an optical element (100) includingna surface-emitting type semiconductor laser (140) and an photodetectornelement (120), having a desired plurality of dielectric layers (30,40),nand its manufacturing method. An optical element (100) in accordancenwith the present invention includes a surface-emitting typensemiconductor laser (140) including, above a substrate (101), a firstnmirror (102), an active layer (103) and a second mirror (104) disposednfrom the side of the substrate (101), a photodetector element (120),nthat is provided above the surface-emitting type semiconductor lasern(140), including a first contact layer (111), a photoabsorption layern(112) and a second contact layer (113) disposed from the side of thensurface-emitting type semiconductor laser (140), a first dielectricnlayer (30) formed above the substrate (101), and a second dielectricnlayer (40) formed above the surface-emitting type semiconductor lasern(140), wherein the first dielectric layer (30) covers a side surface ofna first columnar section (130) including at least a portion of thensecond mirror (104), and the second dielectric layer (40) covers a sidensurface of a second columnar section (132) including at least a portionnof the second contact layer (113). |
| priorityDate | 2004-01-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 37.