http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1548809-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T436-25 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67109 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02255 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67253 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31662 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67248 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 |
| filingDate | 2003-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aa70862fdb19aa7b23eb104e048510a3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_69490a32ee1576e32c1a95f8dfb98b47 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1865a13c967bc539cd38c3e54fb37160 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f27f90a0f80cb9feeb2d05e384fe285a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c3f1ba247ae0855045a6f81e40d10cde |
| publicationDate | 2005-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-1548809-A1 |
| titleOfInvention | Heat treatment method and heat treatment apparatus |
| abstract | The present invention relates to a thermal processing methodnincluding thermal processing steps having: a step of holding a pluralitynof substrates by means of a substrate holder, a step of conveying thensubstrate holder into a reaction container, a step of heating a plurality ofnzones of thermal process atmosphere in the reaction container by meansnof a plurality of heating units, respectively, and a step of forming thinnfilms on surfaces of the plurality of substrates by introducing a processngas into the reaction container. The thermal processing methodnincludes: a first thermal processing step of carrying out the thermalnprocessing steps by using a plurality of first substrates as the plurality ofnsubstrates, wherein thin films are formed on surfaces of the plurality ofnfirst substrates by means of less consumption of the process gas than onnsurfaces of production substrates; a first measuring step of measuring anthickness of the thin films formed on the surfaces of the plurality of firstnsubstrates for each of the plurality of zones of the thermal processnatmosphere in the reaction container; and a first setting step of settingnrespective temperature set values of the plurality of heating units in suchna manner that the thickness measured for each of the plurality of zonesnsubstantially coincides with a target thickness of thin films to be formednon the surfaces of production substrates, based on measurement resultnof the first measuring step. Then, a second thermal processing step ofncarrying out the thermal processing steps by using a plurality of secondnsubstrates as the plurality of substrates, wherein thin films are formednon surfaces of the plurality of second substrates by means of morenconsumption of the process gas than on the surfaces of the plurality ofnfirst substrates, and wherein the plurality of heating units arenrespectively adjusted to the respective temperature set values set by thenfirst setting step; a second measuring step of measuring a thickness ofnthe thin films formed on the surfaces of the plurality of secondnsubstrates for each of the plurality of zones of the thermal processnatmosphere in the reaction container; and a second correcting step ofncorrecting the respective temperature set values of the plurality ofnheating units in such a manner that the thickness measured for each ofnthe plurality of zones substantially coincides with the target thickness of nthin films to be formed on the surfaces of production substrates, basednon measurement result of the second measuring step; are carried out.nThen, a third thermal processing step of carrying out the thermalnprocessing steps by using at least a plurality of production substrates asnthe plurality of substrates, wherein the plurality of heating units arenrespectively adjusted to the respective temperature set values correctednby the second correcting step, is carried out. |
| priorityDate | 2002-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 43.