| abstract |
A method for producing a Group III element nitride single crystal, which comprisesnreacting at least one Group III element selected from the group consisting of galliumn(Ga), aluminium (Al) and indium (In) with nitrogen (N) in a mixed flux of sodiumn(Na) and at least one of an alkali metal (except Na) and an alkaline earth metal. Thenmethod allows the production, with a good yield, of the single crystal of a group IIInelement nitride which is transparent, is reduced in the density of dislocation, has anbulk form, and is large. In particular, a gallium nitride single crystal produced by thenmethod has high quality and takes a large and transparent bulk form, and thus has anhigh practical value. |