Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c7a10fbf1f430df4d142d0c9ff2fbb79 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1087 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0692 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823425 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 |
filingDate |
2003-05-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_49e9912722757b8509c6d66900e63f94 |
publicationDate |
2005-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
EP-1540737-A2 |
titleOfInvention |
Mosfet device having geometry that permits frequent body contact |
abstract |
A MOSFET device design is provided that effectively addresses the problems arising from the parasitic bipolar transistor that is intrinsic to the device. The MOSFET device comprises: (a) a body region; (b) a plurality of body contact regions; (c) a plurality of source regions; (d) a plurality of drain regions; and (d) a gate region. In plan view, the source regions and the drain regions are arranged in orthogonal rows and columns, and at least a portion of the body contact regions are bordered by four of the source and drain regions, preferably two source regions and two drain regions. |
priorityDate |
2002-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |