| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9124f620af507e5b781169a2459ae84f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02189
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02301
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02181
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31645 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02277
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45536
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45542
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-482
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3141 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 |
| filingDate |
2003-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8fb0b0e48ff969cc171f68c9ad416f71
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b1a24b2597f9787c2093399dd109f83a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_86f6ac5f64d556be3a5363c3f3f35099
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_792c72d759f9f9c4903f66d294ff0027 |
| publicationDate |
2005-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-1540034-A2 |
| titleOfInvention |
Method for energy-assisted atomic layer depositon and removal |
| abstract |
A method for energy-assisted atomic layer deposition and removal of a dielectric film are provided. In one embodiment a substrate (14) is placed into a reaction chamber (10) and a gaseous precursor is introduced into the reaction chamber (10). Energy is provide by a pulse of electromagnetic radiation which forms radical species of the gaseous precursor. The radical species react with the surface of the substrate (14) to form a radical terminated surface on the substrate (14). The reaction chamber (10) is purged and a second gaseous precursor is introduced. A second electromagnetic radiation pulse is initiated and forms second radical species. The second radical species of the second gas react with the surface to form a film on the substrate (14). Alternately, the gaseous species can be chosen to produce radicals that result in the removal of material from the surface of the substrate (14). |
| priorityDate |
2002-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |