http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1531499-A2

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filingDate 2004-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a8695c7c4f8458e14f7fa1b234c9e931
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publicationDate 2005-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-1531499-A2
titleOfInvention Nitride-based semiconductor light-emitting device and method of manufacturing the same
abstract Provided are a nitride-based light-emitting device including a transparentnelectrode made of a transparent conductive oxide having a higher work functionnthan indium tin oxide and a method of manufacturing the same. Thennitride-based light-emitting device has a sequentially stacked structure of ansubstrate, an n-type clad layer, an active layer, a p-type clad layer, and an ohmicncontact layer. The ohmic contact layer is formed as a film made of a transparentnconductive oxide having a higher work function than indium tin oxide or as a filmnmade of the transparent conductive oxide doped with a metal dopant. Therefore,nohmic contact characteristics with the p-type clad layer are enhanced, therebynensuring excellent current-voltage characteristics. Furthermore, the high lightntransmittance of the transparent electrode can increase the emission efficiency ofnthe device.
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priorityDate 2003-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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