| abstract |
The solution is useful for removing a barrier material from a semiconductornsubstrate. The solution comprises, by weight percent, 0.01 to 25 oxidizer, 0 to 15 inhibitornfor a nonferrous metal, 0 to 15 abrasive, 0 to 20 complexing agent for the nonferrous metal,n0.01 to 12 barrier removal agent and balance water. The barrier removal agent is selectednfrom the group comprising imine derivative compounds, hydrazine derivative compoundsnand mixtures thereof. |