http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1481450-B1

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filingDate 2003-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2007-07-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_209c6b2ae44f95f521a9100bcc26840b
publicationDate 2007-07-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-1481450-B1
titleOfInvention A de-tuned distributed feedback laser diode
abstract A semiconductor laser (10) that includes a feedback laser section (12) and an amplifier section (14). The feedback laser section (12) generates a laser beam that has a maximum intensity at a first wavelength. The amplifier section (14) amplifies the laser beam into a high powered beam. The amplifier section (14) is constructed to have a peak optical gain located at a second wavelength that is offset from the first wavelength. Offset the wavelength generated in the feedback laser section (12) from the peak gain wavelength of the amplifier section (14) will result in an output beam that has a much broader linewidth that the feedback section (12) alone. The broader linewidth is relatively stable even when part of the light reflects back into the semiconductor laser (10).
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