abstract |
The present invention is a 1-azaallyl compound of the formula:n nand metal coordination complexes of a representative compound, such asnEt(N)C(tBu)CH 2 SiMe 3 , wherein Et = ethyl, tBu = tertiary butyl and Me = methyl, andnprocesses for depositing metal and metal compound films, such as metal nitride andnmetal oxide films on electronic materials substrates using CVD or ALD of those metalncoordination complexes of the compound. |